In situ growth rate measurements of selective LPCVD of Tungsten

摘要

The reflectance measurement during the selective deposition of W on Si covered with an insulator grating is proven tobe a convenient method to monitor the W deposition. The reflectance change during deposition allows the in situ measurementof the deposition rate. The influence of surface roughening due to either the W growth or an etching pretreatmentof the wafer is modeled, as well as the effect of selectivity loss and lateral overgrowth.